Fujitsu Develops Technology Enabling Higher-Density Spin-Torque-Transfer MRAM
By Frontier India | June 16th, 2010 | Category: Internet, R&D | No Comments »Fujitsu Laboratories Limited today announced the development of a new memory cell circuit for spin-torque-transfer MRAM that reverses the typical order of magnetic tunnel junctions (MTJ) to enable a space savings of 60% and achieve a greater degree of integration than was previously possible. Spin-torque-transfer MRAM is regarded as a next-generation non-volatile memory with high [...]